NTD20N06L

NTD20N06L, NTDV20N06L MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AEC Q101 Qualified − NTDV20N06L These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) VDSS VDGR VGS VGS ID ID IDM PD 60 Vdc 60 Vdc Vdc ±15 ±20 20 Adc 10 60 Apk 60 W 0.40 W/°C 1.88 W 1.36 W Operating and Storage Temperature Range TJ, Tstg − 55 to °C +175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 16 A, VDS = 60 Vdc) EAS 128 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJC RqJA RqJA °C/W 2.5 80 110 Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the ...