NTDV20N06

NTD20N06, NTDV20N06 MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg 60 60 ±20 ±30 20 10 60 60 0.40 1.88 1.36 −55 to 175 Vdc Vdc Vdc Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junctio...