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LDTA124GLT1G Dataheets PDF



Part Number LDTA124GLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTA124GLT1G DatasheetLDTA124GLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimin.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits −50 −50 −5 −100 200 150 −55 to +150 Unit V V V mA mW C C LDTA124GLT1G 3 1 2 SOT–23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA124GLT1G Q2 - 22 3000/Tape & Reel LDTA124GLT3G Q2 - 22 10000/Tape & Reel zElectrical characteristics (T 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R2 fT Min. −50 −50 −5 − −140 − 56 15.4 − Typ. − − − − − − − 22 250 Max. − − − −0.5 −260 −0.3 − 28.6 − Unit V V V µA µA V − kΩ MHz Conditions IC= −50µA IC= −1mA IE= −330µA VCB= −50V VEB= −4V IC= −10mA , IB= −0.5mA IC= −5mA , VCE= −5V − VCE= −10V , IE= 5mA , f= 100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD. LDTA124GLT1G zElectrical characteristic curves DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k VCE=5V 500 200 100 50 Ta=100°C Ta=25°C Ta= −40°C 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current 1 IC/IB=20/1 500m 200m 100m 50m Ta=100°C Ta=25°C Ta= −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTA124GLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 .


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