RJK0660DPA

RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 60 20 40 160 40 20 30 65 1.93 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Page 1 of 6 RJK0660DPA Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forw...