Power MOSFET
NVD5484NL
Power MOSFET
60 V, 17 mW, 54 A, Single N−Channel Logic Level, DPAK
Features
• Low RDS(on) to Minimize Conduc...
Description
NVD5484NL
Power MOSFET
60 V, 17 mW, 54 A, Single N−Channel Logic Level, DPAK
Features
Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation (Note 1)
RqJC
Continuous Drain Cur-
rent 3)
RqJA
(Notes
1,
2
&
Power (Notes
Dissipation 1 & 2)
RqJA
Pulsed Drain Current Current Limited by Package (Note 3)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C TA = 25°C
Steady TA = 100°C State TA = 25°C
TA = 100°C TA = 25°C, tp = 10 ms
TA = 25°C
VDSS VGS ID
PD
ID
PD
IDM IDmaxpkg
60 "20
54 38 100 50 10.7
7.6
3.9 2.0 305 60
V V A
W
A
W
A A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to +175
°C
Source Current (Body Diode)
IS 83 A
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 50 A, L = 0.1 mH, RG = 25 W)
EAS 125 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device rel...
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