NVB60N06

NTB60N06, NVB60N06 Power MOSFET 60 V, 60 A, N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AEC−Q101 Qualified and PPAP Capable − NVB60N06 These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range VDSS VDGR VGS VGS 60 60 "20 "30 Vdc Vdc Vdc ID ID IDM PD TJ, Tstg 60 42.3 180 150 1.0 2.4 −55 to +175 Adc Apk W W/°C W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 55 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS 454 mJ RqJC RqJA TL °C/W 1.0 62.5 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stres...