NVD5862N

NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS Gate−to−Source Voltage VGS Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1 & 2) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Current Limited by Package (Note 3) TC = 25°C Steady TC = 100°C State TC = 25°C TC = 100°C TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms TA = 25°C ID PD ID PD IDM IDmaxpkg 60 "20 98 69 115 58 18 13 4.1 2.0 367 60 V V A W A W A A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS 96 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 37 A, L = 0.3 mH, RG = 25 W) EAS 205 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain)...