N-Channel Power MOSFET
DATA SHEET www.onsemi.com
MOSFET – Power, Single N-Channel
60 V, 1.2 mW, 287 A
V(BR)DSS 60 V
RDS(ON) MAX 1.2 mW @ 10 ...
Description
DATA SHEET www.onsemi.com
MOSFET – Power, Single N-Channel
60 V, 1.2 mW, 287 A
V(BR)DSS 60 V
RDS(ON) MAX 1.2 mW @ 10 V 1.7 mW @ 4.5 V
ID MAX 287 A
NVMFS5C604NL D (5,6)
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
287
A
203
200 W 100
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
40
A
28
3.9
W
1.9
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 22 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
203
A
EAS
776 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliabi...
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