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STD5407NT4G Dataheets PDF



Part Number STD5407NT4G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet STD5407NT4G DatasheetSTD5407NT4G Datasheet (PDF)

NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit .

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NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − RqJC Steady TC = 25°C State TC = 100°C ID 38 A 27 Power Dissipation − RqJC Steady State TC = 25°C PD 75 W Continuous Drain Current RqJA (Note 1) Steady TA = 25°C State TA = 100°C ID 7.6 A 5.3 Power Dissipation − RqJA (Note 1) Steady TA = 25°C State PD 2.9 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature IDM TJ, TSTG 75 −55 to 175 A °C Source Current (Body Diode) Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS EAS TL 36 A 150 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit Junction−to−Case (Drain) RθJC Junction−to−Ambient (Note 1) RθJA 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). 2.0 °C/W 52 °C/W © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 6 1 http://onsemi.com V(BR)DSS 40 V RDS(ON) TYP 21 mW @ 10 V ID MAX (Note 1) 38 A N−Channel D G S 4 12 3 DPAK CASE 369C STYLE 2 MARKING DIAGRAM 1 AYWW 54 07NG A Y WW 5407N G = Assembly Location* = Year = Work Week = Specific Device Code = Pb−Free Device * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† NTD5407NT4G DPAK 2500 / Tape & Reel (Pb−Free) STD5407NT4G* DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTD5407N/D NTD5407N, STD5407N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient 39 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) IDSS IGSS VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 100°C VDS = 0 V, VGS = ±30 V 1.0 10 ±100 mA nA Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH) VGS(TH)/TJ VGS = VDS, ID = 250 mA 1.5 3.5 V −6.0 mV/°C Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES RDS(on) gFS VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 10 A VGS = 10 V, ID = 18 A 21 26 mW 32 40 15 S Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS = 0 V, f = 1.0 MHz, VDS = 32 V Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge QG(TOT) QGS QGD VGS = 10 V, VDS = 32 V, ID = 38 A SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) VGS = 10 V, VDD = 32 V, ID = 38 A, RG = 2.5 W Fall Time tf SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) 615 1000 pF 173 80 20 nC 2.25 10.5 6.8 ns 17 66 51 10 ns 175 13 23 Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 5.0 A TJ = 125°C 0.9 1.1 V 0.75 Reverse Recovery Time tRR 38 ns Charge Time Discharge Time ta VGS = 0 V, dIS/dt = 100 A/ms, tb IS = 15 A 20.5 17 Reverse Recovery Charge QRR 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTD5407N, STD5407N TYPICAL PERFORMANCE CURVES 60 VGS = 7 V to 10 V TJ = 25°C 6V 50 5.5 V 40 5V 30 4.5 V 20 4V 10 0 01 23 45 67 3.5 V 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure .


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