Document
NTD5407N, STD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
• Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems • Electronic Power Steering • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
VDSS 40 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain Current − RqJC
Steady TC = 25°C State TC = 100°C
ID
38 A 27
Power Dissipation − RqJC
Steady State
TC = 25°C
PD
75 W
Continuous Drain Current RqJA (Note 1)
Steady TA = 25°C State
TA = 100°C
ID
7.6 A 5.3
Power Dissipation − RqJA (Note 1)
Steady TA = 25°C State
PD
2.9 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
75
−55 to 175
A
°C
Source Current (Body Diode)
Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 17 A, L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS EAS
TL
36 A 150 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RθJC
Junction−to−Ambient (Note 1)
RθJA
1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces).
2.0 °C/W 52 °C/W
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 6
1
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V(BR)DSS 40 V
RDS(ON) TYP 21 mW @ 10 V
ID MAX (Note 1)
38 A
N−Channel D
G
S 4
12 3
DPAK CASE 369C
STYLE 2
MARKING DIAGRAM
1 AYWW 54
07NG
A Y WW 5407N G
= Assembly Location* = Year = Work Week = Specific Device Code = Pb−Free Device
* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package
Shipping†
NTD5407NT4G DPAK 2500 / Tape & Reel (Pb−Free)
STD5407NT4G* DPAK 2500 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Publication Order Number: NTD5407N/D
NTD5407N, STD5407N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient
39
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2)
IDSS IGSS
VGS = 0 V, VDS = 40 V
TJ = 25°C TJ = 100°C
VDS = 0 V, VGS = ±30 V
1.0 10 ±100
mA nA
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS(TH) VGS(TH)/TJ
VGS = VDS, ID = 250 mA
1.5 3.5 V −6.0 mV/°C
Drain−to−Source On Resistance
Forward Transconductance CHARGES AND CAPACITANCES
RDS(on) gFS
VGS = 10 V, ID = 20 A VGS = 5.0 V, ID = 10 A VGS = 10 V, ID = 18 A
21 26 mW 32 40 15 S
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS = 0 V, f = 1.0 MHz, VDS = 32 V
Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge
QG(TOT) QGS QGD
VGS = 10 V, VDS = 32 V, ID = 38 A
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = 10 V, VDD = 32 V, ID = 38 A, RG = 2.5 W
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = 5 V, VDD = 20 V, ID = 20 A, RG = 2.5 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
615
1000
pF
173
80
20 nC
2.25
10.5
6.8 ns 17 66 51
10 ns 175 13 23
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 5.0 A
TJ = 125°C
0.9 1.1 V 0.75
Reverse Recovery Time
tRR
38 ns
Charge Time Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms, tb IS = 15 A
20.5 17
Reverse Recovery Charge
QRR
40 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
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ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTD5407N, STD5407N
TYPICAL PERFORMANCE CURVES
60
VGS = 7 V to 10 V
TJ = 25°C
6V
50
5.5 V 40
5V 30
4.5 V 20
4V 10
0 01
23
45
67
3.5 V 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure .