NTP5404N

NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N−Channel, D2PAK & TO−220 Features Low RDS(on) High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − NVB5404N These Devices are Pb−Free and are RoHS Compliant Applications Electronic Brake Systems Electronic Power Steering Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − RqJC Steady TC = 25°C State TC = 100°C ID 167 A 118 Power Dissipation − RqJC Steady State TC = 25°C PD 254 W Continuous Drain Current − RqJA (Note 1) Steady TA = 25°C State TA = 100°C ID 24 A 17 Power Dissipation − RqJA (Note 1) Steady TA = 25°C State Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature PD IDM TJ, TSTG 5.4 W 670 −55 to 175 A °C Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 45 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS EAS TL 75 1000 A mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) RθJC Junction−to−Ambient (Note 1) RθJA 1. ...