Small Signal MOSFET
NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
• Low Gate Voltage Threshold (VG...
Description
NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit
Design
Low Gate Charge for Fast Switching ESD Protected Gate SOT−23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Notebooks:
♦ Level Shifters ♦ Logic Switches ♦ Low Side Load Switches
Portable Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25°C State TA = 85°C
Steady State
VDSS VGS ID
PD
30 ±20 0.5 0.37 0.69
V V A
W
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
t < 10 s TA = 25°C TA = 85°C
t<5s
ID PD
0.56 A 0.40 0.83 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM 1.7 A
TJ, −55 to °C Tstg 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS 1.0 A TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATING...
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