NVTFS4C13N

NVTFS4C13N MOSFET – Power, Single N-Channel, m8FL 30 V, 9.4 mW, 40 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2, 4) VDSS 30 V VGS ±20 V TA = 25°C ID 14 A TA = 100°C 10 Power Dissipation RqJA TA = 25°C PD (Note 1, 2, 4) Steady TA = 100°C Continuous Drain Current RqJC (Note 1, 3, 4) State TC = 25°C ID TC = 100°C 3.0 W 1.5 40 28 A Power Dissipation RqJC (Note 1, 3, 4) TC = 25°C PD TC = 100°C 26 W 13 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 152 A Operating Junction and Storage Temperature TJ, −55 to °C Tstg +175 Source Current (Body Diode) IS 24 A Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, IL = 14 Apk, L = 0.1 mH) 10 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and re...