KTA1046

SEMICONDUCTOR TECHNICAL DATA INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Complementary to KTC2026. KTA1046 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING -60 -60 -7 -3 -0.5 2 20 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE(1) Classification Y:100 200, GR:150 300 2011. 7. 13 Revision No : 4 MIN. -60 100 20 - TYP. - -0.25 -0.7 30 45 MAX. -1 -1 300 -1.0 -1.0 - UNIT A A V V V MHz pF - 0.4 - - 1.7 - S - 0.5 - 1/2 KTA1046 2011. 7. 13 Revision No : 4 2/2 ...