SEMICONDUCTOR
TECHNICAL DATA
INDUSTRIAL USE. GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VC...
SEMICONDUCTOR
TECHNICAL DATA
INDUSTRIAL USE. GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Complementary to KTC2026.
KTA1046
EPITAXIAL PLANAR
PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -60 -60 -7 -3 -0.5 2 20 150
-55 150
UNIT V V V A A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob
VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-50mA, IB=0 VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz
Turn-on Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification Y:100 200, GR:150 300
2011. 7. 13
Revision No : 4
MIN. -60
100 20 -
TYP. -
-0.25 -0.7 30 45
MAX. -1 -1 300 -1.0 -1.0 -
UNIT A A V
V V MHz pF
- 0.4 -
- 1.7 -
S
- 0.5 -
1/2
KTA1046
2011. 7. 13
Revision No : 4
2/2
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