DSEI20-12A

Fast Recovery Epitaxial Diode (FRED) DSEI 20 IFAVM = 17 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 20-12A TO-220 AC AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TC = 25°C Mounting torque Maximum Ratings 70 17 220 130 140 110 120 85 80 60 60 -40...+150 150 -40...+150 78 0.4...0.6 2 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g Test Conditions Characteristic Values typ. max. TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM IF = 12 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms L £ 0.05 mH; TVJ = 100°C 40 7 750 mA 250 mA 7 mA 1.87 V 2.15 V 1.65 V 18.2 mW 1.6 K/W 60 K/W 60 ns A Features q International standard package q Glass passivated chips q Very short recovery time q Extremely low losses at high switching frequencies q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency switching device...