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LDTC123JLT3G Dataheets PDF



Part Number LDTC123JLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistors
Datasheet LDTC123JLT3G DatasheetLDTC123JLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IO IC(Max.) Pd Tj Tstg Limits 50 −5 to +12 100 100 200 150 −55 to +150 LDTC123JLT1G 3 1 2 SOT-23 1 BASE R1 R2 Unit V V mA mW °C °C 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC123JLT1G A8M 2.2 47 3000/Tape & Reel LDTC123JLT3G A8M 2.2 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio Transition frequency R2/R1 fT ∗ ∗Characteristics of built-in transistor Min. − 1.1 − − − 80 1.54 17 − Typ. − − 0.1 − − − 2.2 21 250 Max. 0.5 − 0.3 3.6 0.5 − 2.86 26 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA − − VCE=10V, IE= −5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. z Electrical characteristic curves LDTC123JLT1G INPUT VOLTAGE : VI (on) (V) 100 VO=0.3V 50 20 10 5 Ta=−40°C 2 25°C 100°C 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) 10m 5m VCC=5V 2m 1m 500µ 200µ Ta=100°C 25°C 100µ −40°C 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k VO=5V 500 Ta=100°C 200 25°C −40°C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO (on) (V) 1 lO/lI=20 500m 200m Ta=100°C 25°C 100m −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC123JLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm 3/3 .


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