IRFU2307ZPbF

PD - 96191B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRFR2307ZPbF IRFU2307ZPbF HEXFET® Power MOSFET D VDSS = 75V G RDS(on) = 16mΩ S ID = 42A D-Pak I-Pak IRFR2307ZPbF IRFU2307ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) hSingle Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter jRθJC Junction-to-Case iRθJA Junction-to-Ambient (PCB mount) RθJA Junction-to-Ambient HEXFET® is a registered trademark of International ...