FDP8N50NZU

FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET 500V, 6.5A, 1.2 February 2010 UniFET-IITM tm Features RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A Low Gate Charge ( Typ. 14nC) Low Crss ( Typ. 5pF) Fast Switching 100% Avalanche Tested Improve dv/dt Capability ESD Improved Capability RoHS Compliant Description This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t echnology ha s been especially t ailored to minimize on-st ate r esistance, provide super ior switchin g performance, and withst and high energy pulse in the avalanch e and commutation mode. The se devices are well suit ed for hig h efficient switching mode pow er supplies and active p ower factor correction. D G GDS TO-220 FDP Series GDS TO-220F FDPF Series (potted) MOSFET Maximum Ratings TC = 25oC unless otherwise noted S Symbol Parameter FDP8N50NZU FDPF8N50NZU Units VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limite...