FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET
FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
February 2010
Uni...
FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET
FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
February 2010
UniFET-IITM
tm
Features
RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A Low Gate Charge ( Typ. 14nC) Low Crss ( Typ. 5pF) Fast Switching 100% Avalanche Tested Improve dv/dt Capability ESD Improved Capability RoHS Compliant
Description
This N-Channel enhancement mode power field effect
transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology.
This advance t echnology ha s been especially t ailored to minimize on-st ate r esistance, provide super ior switchin g performance, and withst and high energy pulse in the avalanch e and commutation mode. The se devices are well suit ed for hig h efficient switching mode pow er supplies and active p ower factor correction.
D
G
GDS
TO-220 FDP Series
GDS
TO-220F FDPF Series (potted)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
S
Symbol
Parameter
FDP8N50NZU FDPF8N50NZU Units
VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limite...