Lead-Free
PD- 95592
IRL520NSPbF IRL520NLPbF
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1 07/21/04
IR520NS/LPbF
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IRL520NS/LPbF
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IR520NS/LPbF
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IRL520NS/LPbF
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IR520NS/LPbF
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IRL520NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
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• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
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* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V
D.U.T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
VDD ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS
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IR520NS/LPbF
D2Pak Package Outline
Dimensions are shown .