NVD4809N

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C VDSS VGS ID PD ID PD ID 30 "20 13.1 10.1 2.63 9.6 7.4 1.4 58 45 V V A W A W A Power Dissipation (RqJC) (Note 1) TC = 25°C Pulsed Drain Current tp=10ms TA = 25°C Current Limited by Package TA = 25°C Operating Junction and Storage Temperature PD IDM IDmaxPkg TJ, Tstg 52 130 45 −55 to 175 W A A °C Source Current (Body Diode) Drain to Source dV/dt IS dV/dt 43 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 13.5 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 91.0 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are ex...