2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =0.010 Ω typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1050-0400 (Previous: ADE-208-559B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM)
D
G
1. Gate 2. Drain 3. Source
12 3
...
