NP40N10PDF

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF) Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified Outline Drain Gate Body Diode Source 8-pin HSON 87 6 5 TO-252 4 TO-263 4 2 34 1 2 3 1 2 3 1 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. NP40N10YDF-E1-AY *1 NP40N10YDF-E2-AY *1 NP40N10VDF-E1-AY *1 NP40N10VDF-E2-AY *1 NP40N10PDF-E1-AY *1 NP40N10PDF-E2-AY *1 Lead Plating Pure Sn (Tin) Pure Sn (Tin) Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Tape 800 p/reel Tap...