Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 97771
IRFS4510PbF
IRFSL4510PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
11.3mΩ
max. 13.9mΩ
S ID (Silicon Limited)
61A
D D
DS G
D2Pak IRFS4510PbF
DS G
TO-262 IRFSL4510PbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
IAR Avalanche Current
fEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
iRθJC Junction-to-Case ijRθJA Junction-to-Ambient
Max. 61 43 250 140 0.95 ± 20 3.2
-55 to + 175
300
x x10lb in (1.1N m)
130 See Fig. 14, 15, 22a, 22b,
Typ. –––
–––
Max. 1.05 40
Units A W
W/°C V
V/ns °C
mJ A mJ
Units °C/W
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4/10/12
IRFS/SL4510PbF
Static @ TJ...
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