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NP50P06SDG

Part Number	NP50P06SDG
Manufacturer	NEC
Description	MOS FIELD EFFECT TRANSISTOR
Features	• Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V,...
Published	Aug 19, 2015
Datasheet	NP50P06SDG PDF File

Features

• Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
• Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Vol...

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NP50P06SDG MOS FIELD EFFECT TRANSISTOR - NEC

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