Document
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
PD - 95661
IRL3714ZPbF
IRL3714ZSPbF
IRL3714ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 16m
4.8nC
Benefits
l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3714Z
D2Pak IRL3714ZS
TO-262 IRL3714ZL
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount)
Notes through are on page 12 www.irf.com
Max. 20 ± 20
36g 25g
140 35 18 0.23 -55 to + 175
300 (1.6mm from case)
Typ. ––– 0.50 ––– –––
Max. 4.3 ––– 62 40
Units V A
W W/°C
°C
Units °C/W
1
7/30/04
IRL3714Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.015 ––– mV/°C Reference to 25°C, ID = 1mA
––– 13
e16 mΩ VGS = 10V, ID = 15A
––– 21 26
eVGS = 4.5V, ID = 12A
1.65 2.1 2.55 V VDS = VGS, ID = 250µA
––– -5.2 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
21 ––– ––– ––– 4.8 7.2
S VDS = 10V, ID = 14A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 1.7 ––– ––– 0.80 ––– ––– 1.7 ––– ––– 0.60 –––
VDS = 10V nC VGS = 4.5V
ID = 14A See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 2.5 –––
Qoss td(on) tr td(off)
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
––– 2.7 ––– nC VDS = 10V, VGS = 0V
––– 6.0 –––
eVDD = 10V, VGS = 4.5V
––– 13 –––
ID = 14A
––– 10 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.0 –––
Ciss Input Capacitance
––– 550 –––
VGS = 0V
Coss Output Capacitance
––– 180 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 99 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy ÃIAR Avalanche Current EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 23 14 3.5
Units mJ A mJ
Diode Characteristics
Parameter IS Continuous Source Current
gMin. Typ. Max. Units
Conditions
––– ––– 36
MOSFET symbol
D
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 140
––– ––– 1.0 ––– 8.3 12 ––– 1.5 2.3
A showing the integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 14A, VGS = 0V
ens TJ = 25°C, IF = 14A, VDD = 10V
nC di/dt = 100A/µs
2 www.irf.com
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
IRL3714Z/S/LPbF
1000 100
TOP BOTTOM
VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
10
1 0.1
3.0V 30µs PULSE WIDTH Tj = 25°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
10 3.0V
1 0.1
30µs PULSE WIDTH Tj = 175°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
1000
TJ = 25°C 100
TJ = 175°C
10
VDS = 10V 30µs PULSE WIDTH 1.0 2 3 4 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 36A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
IRL3714Z/S/LPbF
10000 1000 100
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss
Coss Crss
C, Capacitance(pF)
10 1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
6.0 ID= 14A
5.0
4.0
VDS= 16V VDS= 10V
3.0
2.0
1.0
0.0 0
123456 QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
7
ISD, Reverse Drain Current (A)
1000.00
100.00 TJ = 175°C
10.00
1.00 0.0
TJ = 25°C
VGS = 0V
0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID, Drain-to-Source Current (A)
1000 100
OPERATION IN THIS AREA LIMITED BY R DS(on)
10 100µsec
.