SiR804DP

New Product N-Channel 100 V (D-S) MOSFET SiR804DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0072 at VGS = 10 V 0.0078 at VGS = 7.5 V 0.0103 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 60 60 60 Qg (Typ.) 24.8 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Fixed Telecom DC/DC Converter Primary Side Switch D G Bottom View Ordering Information: SiR804DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 100 ± 20 60a 60a 20.8b, c 16.6b, c 100 60a 5.6b, c 35 61 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady Stat...