LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor...
LESHAN RADIO COMPANY, LTD.
Bias Resistor
Transistor
PNP Silicon Surface Mount
Transistor with Monolithic Bias Resistor Network
LDTBG12GPWT1G
zApplications Driver
zFeatures 1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
We declare that the material of product compliance with
RoHS requirements.
zStructure
NPN epitaxial planar silicon
transistor (with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP
PC
Tj Tstg
Limits -60±10 -60 ±10
-5 -1 -2 ∗1 0.5 2 ∗2 150 −55 to +150
Unit V V V A A
W
°C °C
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
3
1 2
SOT–323 (SC–70)
1 BASE
R1 R
3 COLLECTOR
R=10kΩ
2 EMITTER
LDTBG12GPWT1G
Q8
1 22 3000/Tape & Reel
LDTBG12GPWT3G
Q8
1 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance
Symbol BVCBO BVC...