DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP40N055ELE, NP40N055KLE NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
SWITC...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP40N055ELE, NP40N055KLE NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION These products are N-channel MOS Field Effect
Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP40N055ELE-E1-AY Note1, 2 NP40N055ELE-E2-AY Note1, 2 NP40N055KLE-E1-AY Note1 NP40N055KLE-E2-AY Note1 NP40N055CLE-S12-AZ Note1, 2 NP40N055DLE-S12-AY Note1, 2 NP40N055MLE-S18-AY Note1 NP40N055NLE-S18-AY Note1
LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin)
PACKING Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES Channel temperature 175 degree rated Super low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
Low input capacitance Ciss = 1300 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
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