NP55N055SUG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N055SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SUG TO-252 (MP-3ZK) FEATURES Channel temperature 175 degree rating Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A) Low Ciss: Ciss = 3500 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 Total Power Dissipation (TC = 25°C) PT1 77 Total Power Dissipation (TA = 25°C) Channel Temperature PT2 1.2 Tch 175 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg −55 to +175 IAR 27 EAR 73 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.95 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16863EJ2V0DS0...