NP55N055SDG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N055SDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SDG TO-252 (MP-3ZK) FEATURES Channel temperature 175 degree rating Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A) Low Ciss: Ciss = 3200 pF TYP. Logic level drive type (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT1 77 PT2 1.2 Channel Temperature Tch 175 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% Tstg −55 to +175 IAR 27 EAR 73 2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.95 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. ...