IRF6709S2TR1PbF

l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques  l 100% Rg tested PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 5.9mΩ@10V 10.1mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V Applicable DirectFET Outline and Substrate Outline  S1 DirectFET™ ISOMETRIC S1 S2 SB M2 M4 L4 L6 L8 Description The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this ...