IRFR3711PbF

PD- 95073A SMPS MOSFET IRFR3711PbF IRFU3711PbF Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l 100% RG Tested l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.5mΩ ID 110A„ D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Gate-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gMaximum Power Dissipation Maximum Power Dissipation Linear Derating Factor TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Symbol RθJC RθJA RθJA Parameter hJunction-to-Case ghJunction-to-Ambient (PCB Mount) hJunction-to-Ambient Max 20 ± 20 f100 69 f 440 2.5 120 0.96 -55 to +150 Typ ––– ––– ––– Max 1.04 50 110 Units V A W W/°C °C Units °C/W Notes  through † are on page 10 www.irf.com 1 1/7/05 IRFR/U3711PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 20 ––– ––– 0.022 RDS(on) Static Drain-to-Source On-R...