Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage Input voltage
Output current
Power dissipation Junction temperature Storage temperature
VCC VIN IO IC(Max.) Pd Tj Tstg
Limits
50 −5 to +12
100 100 200 150 −55 to +150
LDTC123JWT1G
3 1
2 SOT–323 (SC–70)
1 BASE
R1 R2
Unit
V V
mA
mW °C °C
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC123JWT1G
N9
2.2 47
3000/Tape & Reel
LDTC123JWT3G
N9
2.2 47 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off) VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio Transition frequency
R2/R1
fT ∗
∗Characteristics of built-in transistor
Min. − 1.1 − − − 80
1.54 17 −
Typ. − − 0.1 − − − 2.2 21
250
Max. 0.5 − 0.3 3.6 0.5 − 2.86 26 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=5V, IO=100µA VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA
− − VCE=10V, IE= −5mA, f=100MHz
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LESHAN RADIO COMPANY, LTD.
z Electrical characteristic curves
LDTC123JWT1G
INPUT VOLTAGE : VI (on) (V)
100 VO=0.3V
50
20
10 5
Ta=−40°C 2 25°C
100°C 1 500m
200m
100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
10m 5m VCC=5V
2m
1m 500µ 200µ Ta=100°C
25°C 100µ −40°C 50µ
20µ 10µ 5µ
2µ 1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k VO=5V 500
Ta=100°C 200 25°C
−40°C 100
50
20 10
5
2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
OUTPUT VOLTAGE : VO (on) (V)
1 lO/lI=20
500m
200m Ta=100°C 25°C
100m −40°C 50m
20m
10m
5m
2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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LESHAN RADIO COMPANY, LTD. LDTC123JWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40 e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN 0.032 0.000
0.012 0.004 0.071 0.045 0.047
0.079
INCHES
NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004
0.016 0.010 0.087 0.053 0.055
0.095
GENERIC MARKING DIAGRAM
XXM
1
XX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
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