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IRF7704PbF

International Rectifier
Part Number IRF7704PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 17, 2015
Detailed Description l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Ree...
Datasheet PDF File IRF7704PbF PDF File

IRF7704PbF
IRF7704PbF

Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.
1mm) l Available in Tape & Reel l Lead-Free VDSS -40V PD- 96025A IRF7704PbF HEXFET® Power MOSFET RDS(on) max (mW) 46@VGS = -10V 74@VGS = -4.
5V ID -4.
6A -3.
7A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
This ma...


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