DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2353/2SK2354
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
Low Ciss Ciss = 670 pF TYP. High Avalanche Capability Ratings Isolate TO-220 Package
15.0 ±0.3
3 ±0.1 12.0 ±0.2
PACKAGE DIMENSIONS (in millimeters)
10.0 ±0.3.
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
4 ±0.2 13.5 MIN.
QUALITY GRADE Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
0.7 ±0.1 2.54
1.3 ±0.2 1.5 ±0.2
2.54
2.5 ±0.1 0.65 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)*
ID(pulse) ±18
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30 W
Total Power Dissipation (Ta = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.5 A
Single Avalanche Energy**
EAS 17.4 mJ
1 23
1. Gate 2. Drain 3. Source
MP-45F (ISOLATED TO-220) Drain
Gate
Body Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
...
