LDTD114EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTD114EET1G Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IC PD Tj Tstg 50 −10 to +40 500 200 150 −55 to +150 V V mA mW C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD114EET1G LDTD114EET1G Q5 Q5 10 10 3000/Tape & Reel 10 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage VI(off) VI(on) Output voltage VO(on) Input current II Output current IO(off) DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency ∗ Characteristics of built-in transistor fT ∗ Min. − 3 − − − 56 7 0.8 − Typ. − − 0...