DatasheetsPDF.com

RJK03N1DPA

Renesas Technology

Built in SBD N Channel Power MOS FET


Description
RJK03N1DPA 30V, 45A, 3.0mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0782EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package ...



Renesas Technology

RJK03N1DPA

File Download Download RJK03N1DPA Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)