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RJK0226DNS

Part Number	RJK0226DNS
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 16, 2015
Detailed Description	Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS02...
Datasheet	RJK0226DNS PDF File

Overview

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.
1.
10 Mar 03, 2011 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.
3 m typ.
(at VGS = 8 V)  Pb-free  Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedan...

Similar Datasheet

RJK0226DNS Silicon N Channel Power MOS FET - Renesas Technology

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