FDMC8462

FDMC8462 N-Channel Power Trench® MOSFET March 2008 FDMC8462 N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ tm Features General Description „ Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A „ Low Profile - 1mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion S Pin 1 S S G D5 D6 4G 3S D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 3) (Note 1a) 2S 1S Ratings 40 ±20 20 64 14 50 216 41 2.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 3 53 °C/W Device Marking FDMC8462 Device FDMC8462 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMC8462 R...