Power MOSFET
Lead-Free
PD- 95593
IRL530NSPbF IRL530NLPbF
www.irf.com
1 07/21/04
IRL530NS/LPbF
2 www.irf.com
IRL530NS/LPbF
www...
Description
Lead-Free
PD- 95593
IRL530NSPbF IRL530NLPbF
www.irf.com
1 07/21/04
IRL530NS/LPbF
2 www.irf.com
IRL530NS/LPbF
www.irf.com
3
IRL530NS/LPbF
4 www.irf.com
IRL530NS/LPbF
www.irf.com
5
IRL530NS/LPbF
6 www.irf.com
IRL530NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
-
+
- -+
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V
D.U.T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
VDD ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS
www.irf.com
7
IRL530NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB L Y L INE "L "
Note: "P" in as s embly line pos ition indicates "L ead-F ree"
OR
INT E RNAT IONAL RE CT IF IE R L OGO
AS S E MB L Y L OT CODE
F 530S
PART NUMB E R
DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L
INT E R NAT IONAL R E CT IF IE R L OGO
AS S E MB LY L OT CODE
F 530S
PAR T NU MB E R
DAT E CODE P = DE S IGNAT E S L E AD-F R E E
PR O...
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