AUIRLR3636

AUTOMOTIVE GRADE AUIRLR3636 Features l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Advanced Process Technology l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 5.4m: c6.8m: 99A S ID (Package Limited) 50A D G Gate S G D-Pak AUIRLR3636 D Drain S Source Base Part Number AUIRLR3636 Package Type D-pak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Quantity 75 2000 3000 3000 Orderable Part Number AUIRLR3636 AUIRLR3636TR AUIRLR3636TRL AUIRLR3636TRR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to ab...