FQD3P50TM_F085 500V P-Channel MOSFET
November 2010
FQD3P50TM_F085
500V P-Channel MOSFET
General Description
These P-Ch...
FQD3P50TM_F085 500V P-Channel MOSFET
November 2010
FQD3P50TM_F085
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features
-2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant
S D!
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
G!
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FQD3P50TM_F085 -500 -2.1 -1.33 -8.4 ± 30 250 -2.1 5.0 -4.5 2.5 50 0.4
-5...