Power MOSFETs
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
max. 42m:
S ID
33A
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
DD
S G
DPak IRFR4615PbF
S D G
IPAK IRFU4615PbF
G Gate
D Drain
S Source
Base Part Number
IRFR4615PbF IRFR4615TRLPbF
IRFU4615PbF
Package Type
D-PAK I-PAK
Standard Pack Form Tube/Bulk Tape and Reel Left
Tube/Bulk
Quantity 75
3000
75
Orderable Part Number
IRFR4615PbF IRFR4615TRLPbF
IRFU4615PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
jJunction-to-Case iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through are on page 11
Max. 33 24 140 144 0.96 ±...
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