IRFR4615PBF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ. 34m: max. 42m: S ID 33A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free DD S G DPak IRFR4615PbF S D G IPAK IRFU4615PbF G Gate D Drain S Source Base Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Package Type D-PAK I-PAK Standard Pack Form Tube/Bulk Tape and Reel Left Tube/Bulk Quantity 75 3000 75 Orderable Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through ˆ are on page 11 Max. 33 24 140 144 0.96 ±...