RJK0223DNS

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0110 Rev1.10 May 16, 2012 Application DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package: HWSON3046-8) 5678 234 D1 D1 D1 9 S1/D2 5678 4321 1 G1 MOS1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C MOS1 25 ±20 14 56 14 5 3.1 8 150 –55 to +150 Ratings MOS2 25 ±20 16 64 16 8.5 9.0 10 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C R07DS0126EJ0110 Rev1.10 May 16, 2012 Page 1 of 10 RJK0223DNS Electrical Characteristics MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total ga...