NP34N055HLE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP34N055HLE TO-251 (JEITA) / MP-3 FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A) Low Ciss : Ciss = 2000 pF TYP. Built-in gate protection diode NP34N055ILE Note NP34N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) ID(DC) ID(pulse) PT ±34 ±136 1.2 A A W (TO-252) Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2 PT 88 W IAS 34 / 27 / 10 A EAS 11 / 72 / 100 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to + 175 °C Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.70 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is t...