FDS6673BZ_F085

FDS6673BZ_F085 P-Channel PowerTrench® MOSFET PFD-CSh6a6n7n3eBlZP_oFw08e5rTrench® MOSFET -30V, -14.5A, 7.8mΩ July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.5kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant „ Qualified to AEC Q101 DD D D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current -Continuous -Pulsed (Note1a) Power Dissipation for Single Operation (Note1a) PD (Note1b) (Note1c) TJ, TSTG Operating and Storage Temperature Ratings -30 ±25 -14.5 -75 2.5 1.2 1.0 -55 to 150 Units V V A A W °C Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 °C/W 25 °C/W Package Marking and Ordering Information Device Marking FDS6673BZ Device FDS6673BZ _F085 Reel Size 13’’ Tape Width 12mm Quantity 25...