Document
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
PD - 95581
IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 11m
7.0nC
Benefits
l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3715Z
D2Pak IRL3715ZS
TO-262 IRL3715ZL
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case
fCase-to-Sink, Flat Greased Surface fÃJunction-to-Ambient gJunction-to-Ambient (PCB Mount)
Notes through are on page 12 www.irf.com
Max. 20 ± 20
50 h 36 h
200 45 23 0.30 -55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ. ––– 0.50 ––– –––
Max. 3.33 ––– 62 40
Units V A
W W/°C
°C
Units °C/W
1
07/20/04
IRL3715Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA
e––– 9.2 11 mΩ VGS = 10V, ID = 15A
––– 12.4 15.5
eVGS = 4.5V, ID = 12A
1.65 2.1 2.55 V VDS = VGS, ID = 250µA
––– -5.2 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
31 ––– ––– ––– 7.0 11
S VDS = 10V, ID = 12A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 2.1 –––
VDS = 10V
––– 0.9 ––– nC VGS = 4.5V
––– 2.3 –––
ID = 12A
––– 1.7 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.2 –––
Qoss td(on) tr td(off)
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
––– 3.7 ––– nC VDS = 10V, VGS = 0V
––– 7.1 –––
eVDD = 10V, VGS = 4.5V
––– 44 –––
ID = 12A
––– 11 ––– ns Clamped Inductive Load
tf Fall Time
––– 4.6 –––
Ciss Input Capacitance
––– 870 –––
VGS = 0V
Coss Output Capacitance
––– 270 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy ÃIAR Avalanche Current EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 44 12 4.5
Units mJ A mJ
Diode Characteristics
Parameter IS Continuous Source Current
hMin. Typ. Max. Units
Conditions
––– ––– 50
MOSFET symbol
D
(Body Diode) ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 200
A showing the integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
e––– 9.1 14 ns TJ = 25°C, IF = 12A, VDD = 10V
––– 2.2 3.3 nC di/dt = 100A/µs
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ID, Drain-to-Source Current (A)
1000 100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10 3.0V
1 0.1
60µs PULSE WIDTH Tj = 25°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
IRL3715Z/S/LPbF
1000 100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10 3.0V
1 0.1
60µs PULSE WIDTH Tj = 175°C
1 VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C 100 TJ = 175°C
10 3.0
VDS = 10V 60µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 30A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
C, Capacitance (pF)
IRL3715Z/S/LPbF
10000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
1000
Ciss
100 1
Coss Crss
10 VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100
VGS, Gate-to-Source Voltage (V)
12 ID= 12A
10
VDS= 20V VDS= 10V
8
6
4
2
0 0 4 8 12
QG Total Gate Charge (nC)
16
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
1000.0
100.0
TJ = 175°C 10.0
1.0 TJ = 25°C
0.1 0.0
VGS = 0V
0.5 1.0 1.5 VSD, Source-toDrain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID, Drain-to-So.