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IRL3715ZSPbF Dataheets PDF



Part Number IRL3715ZSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3715ZSPbF DatasheetIRL3715ZSPbF Datasheet (PDF)

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.0nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.0nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds fMounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case fCase-to-Sink, Flat Greased Surface fÃJunction-to-Ambient gJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.irf.com Max. 20 ± 20 50 h 36 h 200 45 23 0.30 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 3.33 ––– 62 40 Units V A W W/°C °C Units °C/W 1 07/20/04 IRL3715Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA e––– 9.2 11 mΩ VGS = 10V, ID = 15A ––– 12.4 15.5 eVGS = 4.5V, ID = 12A 1.65 2.1 2.55 V VDS = VGS, ID = 250µA ––– -5.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 31 ––– ––– ––– 7.0 11 S VDS = 10V, ID = 12A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 2.1 ––– VDS = 10V ––– 0.9 ––– nC VGS = 4.5V ––– 2.3 ––– ID = 12A ––– 1.7 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.2 ––– Qoss td(on) tr td(off) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ––– 3.7 ––– nC VDS = 10V, VGS = 0V ––– 7.1 ––– eVDD = 10V, VGS = 4.5V ––– 44 ––– ID = 12A ––– 11 ––– ns Clamped Inductive Load tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 270 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÙIAR Avalanche Current ™EAR Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 44 12 4.5 Units mJ A mJ Diode Characteristics Parameter IS Continuous Source Current hMin. Typ. Max. Units Conditions ––– ––– 50 MOSFET symbol D (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 ––– ––– 200 A showing the integral reverse G ––– ––– 1.0 p-n junction diode. S eV TJ = 25°C, IS = 12A, VGS = 0V e––– 9.1 14 ns TJ = 25°C, IF = 12A, VDD = 10V ––– 2.2 3.3 nC di/dt = 100A/µs www.irf.com ID, Drain-to-Source Current (A) 1000 100 VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 60µs PULSE WIDTH Tj = 25°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) IRL3715Z/S/LPbF 1000 100 VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 60µs PULSE WIDTH Tj = 175°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (Α) TJ = 25°C 100 TJ = 175°C 10 3.0 VDS = 10V 60µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) 10.0 Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 30A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 C, Capacitance (pF) IRL3715Z/S/LPbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 Ciss 100 1 Coss Crss 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 VGS, Gate-to-Source Voltage (V) 12 ID= 12A 10 VDS= 20V VDS= 10V 8 6 4 2 0 0 4 8 12 QG Total Gate Charge (nC) 16 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) 1000.0 100.0 TJ = 175°C 10.0 1.0 TJ = 25°C 0.1 0.0 VGS = 0V 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) 2.0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID, Drain-to-So.


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