UMF23NDW1T3G

LESHAN RADIO COMPANY, LTD. Power Management(dual transistors) zApplication Power management circuit zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product compliance with RoHS requirements. zStructure Silicon epitaxial planar transistor DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping UMF23NDW1T1G F23 3000/Tape&Reel UMF23NDW1T3G F23 10000/Tape&Reel zAbsolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Limits Collector-base voltage VCBO −60 Collector-emitter voltage VCEO −50 Emitter-base voltage VEBO −6 Collector current IC −150 Collector power dissipation Junction temperature PC 150 (TOTAL) Tj 150 Storage temperature Tstg ∗ 120mW per element must not be exceeded. −55 to +150 Unit V V V mA mW ∗ C C Tr2 Parameter Symbol Supply voltage VCC Input voltage VIN Collector current IC Output current IO Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Limits 50 −10~+40 100 50 150(TOTAL) 150 −55 to +150 Unit V V mA ∗1 mA mW ∗2 C C UMF23NDW1T1G 65 4 1 2 3 SOT-363 (3) (2) (1) Q2 R1 R2 (4) R1=10kΩ R2=10kΩ (5) Q1 (6) 1/5 LESHAN RADIO COMPANY, LTD. UMF23NDW1T1G zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-...