LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
These transistors are designed for general purpose amplifi...
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These
transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
Device Marking:
(S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
VCEO VCBO VEBO
IC
–65 –80 –5.0 –100
–45 –50 –5.0 –100
–30 –30 –5.0 –100
V V V mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C
PD
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
Max 380 250
3.0 328
–55 to +150
Unit mW
mW/°C °C/W
°C
ORDERING INFORMATION
Device LBC85*BDW1T1G LBC85*BDW1T3G
Shipping 3000/Tape & Reel 10000/Tape & Reel
LBC85** DW1T1G S-LBC85** DW1T1G
65 4
1 2 3
SOT-363
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
DEVICE MARKING See Table
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
ELECTRICAL CHARACTERISTICS (TA...