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2SD2649 Dataheets PDF



Part Number 2SD2649
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SD2649 Datasheet2SD2649 Datasheet (PDF)

Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit : mm 2174A [2SD2649] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 12 3 5.45 3.5 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta=25°C.

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Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit : mm 2174A [2SD2649] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 12 3 5.45 3.5 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta=25°C 5.45 SANYO : TO-3PMLH Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Ratings 1500 700 5 6 15 3.0 60 150 --55 to +150 Unit V V V A A W W °C °C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 min 700 Ratings typ max Unit 10 µA 1.0 mA V 1 mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-3147 / O1000 TS IM TA-3047 No.6679-1/4 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time 2SD2649 Symbol VCE(sat) VBE(sat) hFE1 hFE2 tf Conditions IC=3.15A, IB=0.63A IC=3.15A, IB=0.63A VCE=5V, IC=0.5A VCE=5V, IC=3.5A IC=2A, IB1=0.4A, IB2=--0.8A Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR IB1 IB2 RB 50Ω + 100µF VBE= --2V OUTPUT RL 100Ω + 470µF VCC=200V Ratings min typ 10 5 max 3 1.5 8 0.3 Unit V V µs Collector Current, IC -- A 6 2.0A 5 4 3 2 IC -- VCE 1.6A 1.8A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A 0.05A 1 0 IB=0 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V IT02632 hFE -- IC 100 7 5 Ta=120°C VCE=5V 25°C 3 2 --40°C 10 7 5 3 2 1.0 0.1 23 5 7 1.0 23 Collector Current, IC -- A 5 7 10 IT02634 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A IC -- VBE 7 VCE=5V 6 5 4 Ta=120°C --4205°°CC 3 2 1 0 0 5 3 2 1.0 7 5 3 2 0.1 7 5 3 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V IT02633 VCE(sat) -- IC IC / IB=5 --40°C 25°C Ta= --120°C 23 5 7 1.0 23 Collector Current, IC -- A 5 7 10 IT02635 No.6679-2/4 DC Current Gain, hFE Switching Time, SW Time -- µs Collector Current, IC -- A 2SD2649 SW Time -- IC 7 VCC=200V 5 tstg IC / IB1=5 IB2 / IB1=2 3 R load 2 SW Time -- IB2 10 VCC=200V 7 IC=2A 5 IB1=0.4A 3 tstg R load 2 Switching Time, SW Time -- µs 1.0 7 5 3 tf 2 1.0 7 tf 5 3 2 0.1 0.1 2 5 3 2 ICP=15A 10 7 IC=6A 5 3 2 3 5 7 1.0 23 Collector Current, IC -- A Forward Bias A S O PC =60W 5 7 10 IT02636 P T=10300µ0sµs 1ms 10ms 1.0 7 5 3 2 DC operation 0.1 7 5 3 2 Tc=25°C 0.01 Single pulse 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 3.5 5 7 1000 IT02638 Collector Current, IC -- A 0.1 0.1 5 3 2 23 5 7 1.0 2 Base Current, IB2 -- A Reverse Bias A S O 35 IT02637 10 7 5 3 2 1.0 7 5 L=500µH 3 IB2= --1A 2 Tc=25°C 0.1 Single pulse 10 2 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE -- V PC -- Tc 70 23 IT02639 3.0 60 Collector Dissipation, PC -- W 2.5 50 2.0 1.5 No heat sink 1.0 40 30 20 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02640 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C IT02641 Collector Dissipation, PC -- W No.6679-3/4 2SD2649 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and t.


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